| PART |
Description |
Maker |
| AM27C4096 AM27C4096-100DC AM27C4096-100DCB AM27C40 |
6-bit buffers and line drivers 16-SO 0 to 70
Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70
4 Megabit (256 K x 16-Bit) CMOS EPROM 256K X 16 OTPROM, 200 ns, PQCC44
4 Megabit (256 K x 16-Bit) CMOS EPROM 256K X 16 UVPROM, 200 ns, CDIP40
4 Megabit (256 K x 16-Bit) CMOS EPROM 256K X 16 OTPROM, 200 ns, PDIP40
TV 37C 37#22D SKT PLUG 256K X 16 OTPROM, 100 ns, PDIP40
4 Megabit (256 K x 16-Bit) CMOS EPROM 4兆位56亩16位）的CMOS存储
4 Megabit (256 K x 16-Bit) CMOS EPROM 256K X 16 UVPROM, 90 ns, CDIP40
TV 10C 10#20 PIN PLUG
6-bit buffers and line drivers 16-PDIP 0 to 70
TV 37C 37#22D PIN PLUG
TV 18C 18#20 SKT WALL RECP
TV 19C 19#20 PIN WALL RECP
TV 10C 10#20 SKT PLUG
6-bit buffers and line drivers 16-SOIC 0 to 70
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:10; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| GS880V36BT-250 GS880V18BT-333 GS880V18BT-250 GS880 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc.
http://
|
| M5M27C101JK-15 M5M27C101JK-12 |
128K X 8 UVPROM, 150 ns, CQCC32
128K X 8 UVPROM, 120 ns, CQCC32
|
|
| M27C1001-15B1 1001-80F6 M27C1001-20B3 M27C1001-35F |
128K X 8 UVPROM, 80 ns, CDIP32
128K X 8 OTPROM, 200 ns, PDIP32
128K X 8 UVPROM, 35 ns, CDIP32
128K X 8 OTPROM, 70 ns, PQCC32
128K X 8 UVPROM, 200 ns, CDIP32
128K X 8 OTPROM, 120 ns, PDSO32
128K X 8 OTPROM, 250 ns, PDSO32
128K X 8 OTPROM, 45 ns, PQCC32
128K X 8 UVPROM, 100 ns, CDIP32
128K X 8 OTPROM, 100 ns, PDIP32
|
意法半导
STMICROELECTRONICS
|
| 29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD
DIODE SCHOTTKY 45V 2X20A TO247AD
MOSFET N-CH 500V 14A TO-247AD
Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32
MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MX27C1001DC-90 MX27C1001DC-15 |
128K X 8 UVPROM, 90 ns, CDIP32
128K X 8 UVPROM, 150 ns, CDIP32
|
MACRONIX INTERNATIONAL CO LTD
|
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| 29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
|
